High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field
- Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada)
- Department of Physics, Center for the Physics of Materials, McGill University, Montreal, Quebec H3A 2T8 (Canada)
- Ecole Polytechnique de Montreal, Montreal, Quebec H3T 1J4 (Canada)
- Everspin Technologies, 1347 N. Alma School Road, Chandler, Arizona 85224 (United States)
In the absence of any external applied magnetic field, we have found that a magnetic tunnel junction (MTJ) can produce a significant output direct voltage under microwave radiation at frequencies, which are far from the ferromagnetic resonance condition, and this voltage signal can be increase by at least an order of magnitude by applying a direct current bias. The enhancement of the microwave detection can be explained by the nonlinear resistance/conductance of the MTJs. Our estimation suggests that optimized MTJs should achieve sensitivities for non-resonant broadband microwave detection of about 5000 mV/mW.
- OSTI ID:
- 22398899
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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