Direct evidence of strain transfer for InAs island growth on compliant Si substrates

Journal Article · Mon Apr 13 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4918615· OSTI ID:22398893

Marçal, L. A. B.; Magalhães-Paniago, R.; Malachias, Angelo ^[1]; Richard, M. -I. ^[2]; Cavallo, F. ^[3]; Lagally, M. G. ^[4]; Schmidt, O. G. ^[5]; Schülli, T. Ü. ^[2]; Deneke, Ch. ^[6]

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1. Universidade Federal de Minas Gerais, Av. Antonio Carlos 6627, CEP 31270-901, Belo Horizonte (Brazil)
2. European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France)
3. Center for High Technology Materials, University of New Mexico, 1313 Goddard St., Albuquerque, New Mexico 87106 (United States)
4. University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States)
5. Institute for Integrative Nanosciences, IFW-Dresden, D-01171 Dresden (Germany)
6. Laboratório Nacional de Nanotecnologia (LNNano/CNPEM), C.P. 6192, CEP 13083-970, Campinas (Brazil)

Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 × 700 nm{sup 2} can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film.

• OSTI ID: 22398893
• Journal Information: Applied Physics Letters, Vol. 106, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
ELASTICITY
FINITE ELEMENT METHOD
INDIUM ARSENIDES
LAYERS
SEMICONDUCTOR MATERIALS
SILICON
STRAINS
SUBSTRATES
SYNCHROTRON RADIATION
THIN FILMS
THREE-DIMENSIONAL CALCULATIONS
THREE-DIMENSIONAL LATTICES
X-RAY DIFFRACTION