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Title: Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair

A technique for achieving square-shape quantum wells (QWs) against the intrinsic polar discontinuity and interfacial diffusion through self-compensated pair interlayers is reported. Ultrathin low-and-high % pair interlayers that have diffusion-blocking and self-compensation capacities is proposed to resist the elemental diffusion at nanointerfaces and to grow the theoretically described abrupt rectangular AlGaN/GaN superlattices by metal-organic chemical vapor deposition. Light emission efficiency in such nanostructures is effectively enhanced and the quantum-confined Stark effect could be partially suppressed. This concept could effectively improve the quality of ultrathin QWs in functional nanostructures with other semiconductors or through other growth methods.
Authors:
; ; ; ;  [1] ;  [1] ;  [2] ;  [1] ;  [2]
  1. Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22395749
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; CHANNELING; CHEMICAL VAPOR DEPOSITION; DIFFUSION; GALLIUM NITRIDES; ORGANOMETALLIC COMPOUNDS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; STARK EFFECT; SUPERLATTICES; VISIBLE RADIATION