High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup ¯}1{sup ¯}) GaN substrates

Journal Article · Mon Mar 16 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4915324· OSTI ID:22395741

Farrell, R. M.; Cohen, D. A.; Speck, J. S. ^[1]; DenBaars, S. P.; Nakamura, S. ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106 (United States)

We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup ¯}1{sup ¯}) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

• OSTI ID: 22395741
• Journal Information: Applied Physics Letters, Vol. 106, Issue 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CLADDING
COMPARATIVE EVALUATIONS
GALLIUM NITRIDES
INDIUM COMPOUNDS
LASERS
LAYERS
QUANTUM EFFICIENCY
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TIN OXIDES
WAVEGUIDES
WAVELENGTHS