Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands

Journal Article · Mon Jan 05 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4905844· OSTI ID:22395649

Malachias, A. ^[1]; Schülli, T. U. ^[2]; Favre-Nicolin, V. ^[3]; Zhong, Z. ^[4]; Metzger, T. H. ^[2]; Renaud, G. ^[5]

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1. Departamento de Física, Universidade Federal de Minas Gerais, CEP 31270-901 Belo Horizonte, MG (Brazil)
2. ID01/ESRF, 6 rue Jules Horowitz, BP220, F-38043 Grenoble Cedex (France)
3. INAC-SP2M, University Grenoble Alpes, F-38000 Grenoble (France)
4. Department of Physics, Fudan University, Shanghai 200433 (China)
5. CEA, INAC-SP2M, F-38000 Grenoble (France)

Compositional atomic ordering is a crucial issue in the epitaxial growth of nanoparticles and thin films. Here, we report on a method based on x-ray diffuse scattering close to basis forbidden Bragg reflections to infer the lateral location, the symmetry, and the thermal stability of ordered domains in GeSi dome-shaped islands on Si(001) after growth and during annealing. We observe that atomic ordering does not disappear after annealing, demonstrating that it is a resilient metastable phenomenon.

• OSTI ID: 22395649
• Journal Information: Applied Physics Letters, Vol. 106, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BRAGG REFLECTION
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIFFUSE SCATTERING
DOMAIN STRUCTURE
EPITAXY
GERMANIUM SILICIDES
INDIUM FLUORIDES
NANOPARTICLES
PHASE STABILITY
SILICON
SYMMETRY
THIN FILMS
X RADIATION
X-RAY DIFFRACTION