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Title: Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.
Authors:
; ; ; ; ;  [1] ; ;  [2] ; ;  [1] ;  [3] ;  [4]
  1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
  2. National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
  3. (China)
  4. Department of Physics, Tsinghua University, Beijing 100084 (China)
Publication Date:
OSTI Identifier:
22395530
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ELECTRIC FIELDS; ELECTRONS; GALLIUM NITRIDES; HETEROJUNCTIONS; HOLES; ILLUMINANCE; RELAXATION; VARIATIONS; VELOCITY; VISIBLE RADIATION