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Title: Controlled removal of amorphous Se capping layer from a topological insulator

We report on the controlled removal of an amorphous Se capping layer from Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} topological insulators. We show that the Se coalesces into micron-sized islands before desorbing from the surface at a temperature of ∼150 °C. In situ Auger Electron Spectroscopy reveals that Se replaces a significant fraction of the Te near the top surface of the Bi{sub 2}Te{sub 3}. Rutherford Backscattering Spectrometry and Transmission Electron Microscopy show that after heating, Se has been incorporated in the Bi{sub 2}Te{sub 3} lattice down to ∼7 nm from its top surface while remaining iso-structural.
Authors:
; ; ; ; ; ;  [1] ;  [2] ;  [3] ; ;  [4] ;  [2]
  1. IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)
  2. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
  3. (United Kingdom)
  4. Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom)
Publication Date:
OSTI Identifier:
22395524
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AUGER ELECTRON SPECTROSCOPY; BISMUTH SELENIDES; BISMUTH TELLURIDES; CRYSTAL LATTICES; LAYERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACES; TOPOLOGY; TRANSMISSION ELECTRON MICROSCOPY