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Title: Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

Large-area graphene film doped with nitrogen is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, and fuel cells among many others. Here, we report on the structural and electronic properties of nitrogen doped trilayer graphene on 4H-SiC (0001) grown under atmospheric pressure. The trilayer nature of the growth is evidenced by scanning transmission electron microscopy. X-ray photoelectron spectroscopy shows the incorporation of 1.2% of nitrogen distributed in pyrrolic-N, and pyridinic-N configurations as well as a graphitic-N contribution. This incorporation causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. Ultraviolet photoelectron spectroscopy shows a decrease of the work function of 0.3 eV due to the N-type doping of the nitrogen atoms in the carbon lattice and the edge defects. A top gate field effect transistor device has been fabricated and exhibits carrier mobilities up to 1300 cm{sup 2}/V s for holes and 850 cm{sup 2}/V s for electrons at room temperature.
Authors:
; ; ; ; ;  [1] ; ;  [2] ; ;  [3]
  1. LGEP, CNRS UMR8507, SUPELEC, Univ Paris-Sud, Sorbonne Universités - UPMC, Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex (France)
  2. Department of Electronic Engineering, Chang Gung University, No. 259, Wen-Hua 1st Rd, Kweishan, Taoyuan 333, Taiwan (China)
  3. Laboratoire de Photonique et de Nanostructures (CNRS - LPN), Route de Nozay, 91460 Marcoussis (France)
Publication Date:
OSTI Identifier:
22395497
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATMOSPHERIC PRESSURE; CARRIER MOBILITY; DOPED MATERIALS; ELECTRONS; EPITAXY; EV RANGE; FIELD EFFECT TRANSISTORS; FILMS; GRAPHENE; GRAPHITE; HOLES; NANOELECTRONICS; NITROGEN; SILICON CARBIDES; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; WORK FUNCTIONS; X-RAY PHOTOELECTRON SPECTROSCOPY