(In,Mn)As multilayer quantum dot structures

Journal Article · Mon Dec 08 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903065· OSTI ID:22395467

Bouravleuv, Alexei ^[1]; Sapega, Victor ^[1]; Nevedomskii, Vladimir ^[1]; Khrebtov, Artem ^[2]; Samsonenko, Yuriy ^[1]; Cirlin, George ^[2]

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1. Ioffe Physical Technical Institute, RAS, 194021 St. Petersburg (Russian Federation)
2. St. Petersburg Academic University, RAS, 194021 St. Petersburg (Russian Federation)

(In,Mn)As multilayer quantum dots structures were grown by molecular beam epitaxy using a Mn selective doping of the central parts of quantum dots. The study of the structural and magneto-optical properties of the samples with three and five layers of (In,Mn)As quantum dots has shown that during the quantum dots assembly, the out-diffusion of Mn from the layers with (In,Mn)As quantum dots can occur resulting in the formation of the extended defects. To produce a high quality structures using the elaborated technique of selective doping, the number of (In,Mn)As quantum dot layers should not exceed three.

• OSTI ID: 22395467
• Journal Information: Applied Physics Letters, Vol. 105, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL DEFECTS
CRYSTAL GROWTH
DIFFUSION
INDIUM ARSENIDES
LAYERS
MAGNETO-OPTICAL EFFECTS
MANGANESE ARSENIDES
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
QUANTUM DOTS