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Title: (In,Mn)As multilayer quantum dot structures

(In,Mn)As multilayer quantum dots structures were grown by molecular beam epitaxy using a Mn selective doping of the central parts of quantum dots. The study of the structural and magneto-optical properties of the samples with three and five layers of (In,Mn)As quantum dots has shown that during the quantum dots assembly, the out-diffusion of Mn from the layers with (In,Mn)As quantum dots can occur resulting in the formation of the extended defects. To produce a high quality structures using the elaborated technique of selective doping, the number of (In,Mn)As quantum dot layers should not exceed three.
Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [1] ;  [2] ;  [1] ;  [3] ;  [1] ;  [2] ;  [2] ;  [3] ;  [2] ;  [2] ;  [2]
  1. Ioffe Physical Technical Institute, RAS, 194021 St. Petersburg (Russian Federation)
  2. (Russian Federation)
  3. St. Petersburg Academic University, RAS, 194021 St. Petersburg (Russian Federation)
Publication Date:
OSTI Identifier:
22395467
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL DEFECTS; CRYSTAL GROWTH; DIFFUSION; INDIUM ARSENIDES; LAYERS; MAGNETO-OPTICAL EFFECTS; MANGANESE ARSENIDES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; QUANTUM DOTS