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Title: GeSn p-i-n waveguide photodetectors on silicon substrates

We report an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer. In comparison with a reference Ge detector, the GeSn detector shows an enhanced responsivity in the measured energy range, mainly attributed to the smaller bandgap caused by Sn-alloying. Analysis of the quantum efficiency indicates that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency. The present investigation demonstrates the planar photodetectors desired for monolithic integration with electronic devices.
Authors:
;  [1] ;  [2] ;  [3]
  1. Department of Mechanical Engineering and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, Chia-Yi County 62102, Taiwan (China)
  2. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)
  3. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentjeva 13, Novosibirsk 630090 (Russian Federation)
Publication Date:
OSTI Identifier:
22395443
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; ENERGY GAP; GE SEMICONDUCTOR DETECTORS; GERMANIUM; INTERMETALLIC COMPOUNDS; PHOTODETECTORS; QUANTUM EFFICIENCY; SEMICONDUCTOR JUNCTIONS; SILICON; SUBSTRATES; TIN; WAVEGUIDES