GeSn p-i-n waveguide photodetectors on silicon substrates

Journal Article · Mon Dec 08 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903881· OSTI ID:22395443

Peng, Yu-Hsiang; Chang, Guo-En ^[1]; Cheng, H. H. ^[2]; Mashanov, Vladimir I. ^[3]

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1. Department of Mechanical Engineering and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, Chia-Yi County 62102, Taiwan (China)
2. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)
3. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentjeva 13, Novosibirsk 630090 (Russian Federation)

We report an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer. In comparison with a reference Ge detector, the GeSn detector shows an enhanced responsivity in the measured energy range, mainly attributed to the smaller bandgap caused by Sn-alloying. Analysis of the quantum efficiency indicates that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency. The present investigation demonstrates the planar photodetectors desired for monolithic integration with electronic devices.

• OSTI ID: 22395443
• Journal Information: Applied Physics Letters, Vol. 105, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BUFFERS
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
ENERGY GAP
GE SEMICONDUCTOR DETECTORS
GERMANIUM
INTERMETALLIC COMPOUNDS
PHOTODETECTORS
QUANTUM EFFICIENCY
SEMICONDUCTOR JUNCTIONS
SILICON
SUBSTRATES
TIN
WAVEGUIDES