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Title: Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.
Authors:
 [1] ; ; ;  [2]
  1. Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala, Sweden and School of Electrical and Computer Engineering, University of Campinas, CEP 13.083-852 Campinas-SP (Brazil)
  2. Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala (Sweden)
Publication Date:
OSTI Identifier:
22392162
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; ALUMINIUM NITRIDES; ATOMIC FORCE MICROSCOPY; DEPOSITION; DIRECT CURRENT; MAGNETRONS; PULSES; SPUTTERING; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TEXTURE; THICKNESS; THIN FILMS; X-RAY DIFFRACTION