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Title: Defect-free ZnO nanorods for low temperature hydrogen sensor applications

Uniformly distributed and defect-free vertically aligned ZnO nanorods (NRs) with high aspect ratio are deposited on Si by sputtering technique. X-ray diffraction along with transmission electron microscopy studies confirmed the single crystalline wurtzite structure of ZnO. Absence of wide band emission in photoluminescence spectra showed defect-free growth of ZnO NRs which was further conformed by diamagnetic behavior of the NRs. H{sub 2} sensing mechanism based on the change in physical dimension of channel is proposed to explain the fast response (∼21.6 s) and recovery times (∼27 s) of ZnO NRs/Si/ZnO NRs sensors. Proposed H{sub 2} sensor operates at low temperature (∼70 °C) unlike the existing high temperature (>150 °C) sensors.
Authors:
;  [1] ;  [2] ; ;  [3]
  1. Centre for Information and Communication Technology, Indian Institute of Technology Jodhpur, Jodhpur 342011 (India)
  2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)
  3. Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)
Publication Date:
OSTI Identifier:
22392068
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTAL DEFECTS; HYDROGEN; MONOCRYSTALS; NANOSTRUCTURES; PHOTOLUMINESCENCE; SENSORS; SILICON; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ZINC OXIDES