High mobility field effect transistor based on BaSnO{sub 3} with Al{sub 2}O{sub 3} gate oxide
- Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
We fabricated an n-type accumulation-mode field effect transistor based on BaSnO{sub 3} transparent perovskite semiconductor, taking advantage of its high mobility and oxygen stability. We used the conventional metal-insulator-semiconductor structures: (In,Sn){sub 2}O{sub 3} as the source, drain, and gate electrodes, Al{sub 2}O{sub 3} as the gate insulator, and La-doped BaSnO{sub 3} as the semiconducting channel. The Al{sub 2}O{sub 3} gate oxide was deposited by atomic layer deposition technique. At room temperature, we achieved the field effect mobility value of 17.8 cm{sup 2}/Vs and the I{sub on}/I{sub off} ratio value higher than 10{sup 5} for V{sub DS} = 1 V. These values are higher than those previously reported on other perovskite oxides, in spite of the large density of threading dislocations in the BaSnO{sub 3} on SrTiO{sub 3} substrates. However, a relatively large subthreshold swing value was found, which we attribute to the large density of charge traps in the Al{sub 2}O{sub 3} as well as the threading dislocations.
- OSTI ID:
- 22392038
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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