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Title: Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms

The influence of radiative recombination on the minority carrier lifetime in mid-wavelength InAs/InAsSb superlattices was investigated. From the lifetime's dependence on temperature, photon recycling, and carrier concentration, it was demonstrated that radiative lifetime dominates for carrier concentrations >5 × 10{sup 14} cm{sup −3}, and Shockley-Read-Hall recombination starts to dominate the minority carrier lifetime for carrier concentrations <5 × 10{sup 14} cm{sup −3}. An observed increase of the minority carrier lifetime with increasing superlattice thickness was attributed to photon recycling, and good agreement between measured and theoretical values of the photon recycling factor was obtained.
Authors:
; ; ; ; ; ; ;  [1]
  1. Jet Propulsion Laboratory, Center for Infrared Photodetectors, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109-8099 (United States)
Publication Date:
OSTI Identifier:
22391979
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANTIMONY COMPOUNDS; CARRIER LIFETIME; INDIUM ARSENIDES; PHOTONS; RECOMBINATION; RECYCLING; SUPERLATTICES