High-output microwave detector using voltage-induced ferromagnetic resonance

Journal Article · Mon Nov 10 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902025· OSTI ID:22391958

Shiota, Yoichi; Suzuki, Yoshishige ^[1]; Miwa, Shinji ^[2]; Tamaru, Shingo ^[1]; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji ^[1]

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1. National Institute of Advance Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan)
2. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)

We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque.

• OSTI ID: 22391958
• Journal Information: Applied Physics Letters, Vol. 105, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ASYMMETRY
FERROMAGNETIC RESONANCE
KHZ RANGE
MAGNETIZATION
NONLINEAR PROBLEMS
SPIN
TORQUE