skip to main content

SciTech ConnectSciTech Connect

Title: High-output microwave detector using voltage-induced ferromagnetic resonance

We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque.
Authors:
;  [1] ;  [2] ;  [2] ;  [3] ;  [2] ;  [1] ; ; ; ;  [1] ;  [2]
  1. National Institute of Advance Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan)
  2. (Japan)
  3. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)
Publication Date:
OSTI Identifier:
22391958
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASYMMETRY; FERROMAGNETIC RESONANCE; KHZ RANGE; MAGNETIZATION; NONLINEAR PROBLEMS; SPIN; TORQUE