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Title: Passivation of GaSb using molecular beam epitaxy Y{sub 2}O{sub 3} to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

Molecular beam epitaxy deposited rare-earth oxide of Y{sub 2}O{sub 3} has effectively passivated GaSb, leading to low interfacial trap densities of (1–4) × 10{sup 12 }cm{sup −2} eV{sup −1} across the energy bandgap of GaSb. A high saturation drain current density of 130 μA/μm, a peak transconductance of 90 μS/μm, a low subthreshold slope of 147 mV/decade, and a peak field-effect hole mobility of 200 cm{sup 2}/V-s were obtained in 1 μm-gate-length self-aligned inversion-channel GaSb p-Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). In this work, high-κ/GaSb interfacial properties were better in samples with a high substrate temperature of 200 °C than in those with high κ's deposited at room temperature, in terms of the interfacial electrical properties, particularly, the reduction of interfacial trap densities near the conduction band and the MOSFET device performance.
Authors:
;  [1] ; ;  [2] ; ; ;  [3] ;  [4] ;  [5]
  1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  2. Department of Electrical Engineering, National Central University, Jhongli 32001, Taiwan (China)
  3. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
  4. Air Force Research Laboratory (AFRL), Dayton, Ohio 45433 (United States)
  5. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
Publication Date:
OSTI Identifier:
22391904
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CURRENT DENSITY; ELECTRICAL PROPERTIES; GALLIUM ANTIMONIDES; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; MOSFET; PERFORMANCE; RARE EARTHS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; YTTRIUM OXIDES