Electronic and dielectric properties of MoS{sub 2}-MoX{sub 2} heterostructures

Journal Article · Fri May 15 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4915419· OSTI ID:22391738

Sharma, Munish; Jamdagni, Pooja; Kumar, Ashok ^[1]

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1. Department. of Physics, Panjab University, Chandigarh, 160014 (India)

We present a comparative study of electronic and dielectric properties of MoS{sub 2}−MoX{sub 2} heteostructures (where X=S, Se, Te) within the framework of density functional theory (DFT). Electronic band structure, real and imaginary part of dielectric function, electron energy loss spectra and static dielectric constant have been calculated for each system and compared with one another. A systematic decrease/increase in band gap/static dielectric constant is observed as the X changes from S to Te. These results provide a physical basis for the potential applications of these heterostructures in optoelectronic devices.

• OSTI ID: 22391738
• Journal Information: AIP Conference Proceedings, Vol. 1661, Issue 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COMPARATIVE EVALUATIONS
DENSITY FUNCTIONAL METHOD
DIELECTRIC MATERIALS
ELECTRONIC STRUCTURE
ELECTRONS
ENERGY GAP
ENERGY-LOSS SPECTROSCOPY
HETEROJUNCTIONS
MOLYBDENUM SULFIDES
MOLYBDENUM TELLURIDES
OPTOELECTRONIC DEVICES
PERMITTIVITY