skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Silicon microfabricated beam expander

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4914275· OSTI ID:22391330
; ;  [1];  [2]
  1. Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia)
  2. School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

OSTI ID:
22391330
Journal Information:
AIP Conference Proceedings, Vol. 1653, Issue 1; Conference: APMAS 2014: 4. International Congress in Advances in Applied Physics and Materials Science, Fethiye (Turkey), 24-27 Apr 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English

Similar Records

Method for forming suspended micromechanical structures
Patent · Tue Feb 01 00:00:00 EST 2000 · OSTI ID:22391330

Method for forming suspended micromechanical structures
Patent · Sat Jan 01 00:00:00 EST 2000 · OSTI ID:22391330

Lateral Ordering of Microfabricated SiO₂ Nanotips
Journal Article · Thu Jan 01 00:00:00 EST 2004 · Electrochemical and Solid-State Letters, 7(1):C7-C9 · OSTI ID:22391330