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Title: Quantitative analysis of oxygen content in copper oxide films using ultra microbalance

Copper oxide films were prepared on quartz substrates through electron beam physical vapor deposition in a vacuum chamber, and the films were observed using X-ray diffraction (XRD) and scanning electron microscope (SEM). The oxygen content of the films were analyzed using an ultra microbalance. Results indicated that when the substrate was heated to 600°C and the oxygen flow rate was 5 sccm, the film was composed of 47% Cu and 53% Cu2O (mass percent), and the oxidation ratio of copper was 25%. After the deposition process at the same condition, i.e. the substrate at temperature of 600°C and blowed by oxygen flowrate of 5 sccm, then in-stu annealed at 600°C in low oxygen pressure of 10 Pa for 30 minutes, the film composition became 22% Cu2O and 78% CuO (mass percent), and the oxidation ratio of copper greatly increased to about 88%.
Authors:
; ; ;  [1]
  1. State Key Laboratory of High-temperature Gas Dynamics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
22390567
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1628; Journal Issue: 1; Conference: 29. International Symposium on Rarefied Gas Dynamics, Xi'an (China), 13-18 Jul 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; COPPER; COPPER OXIDES; ELECTRON BEAMS; ENERGY BEAM DEPOSITION; FILMS; FLOW RATE; MICROBALANCES; OXIDATION; OXYGEN; PHYSICAL VAPOR DEPOSITION; QUARTZ; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION