skip to main content

SciTech ConnectSciTech Connect

Title: Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm

We report the simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data. (lasers)
Authors:
; ; ; ; ; ;  [1]
  1. Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
22373586
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 44; Journal Issue: 2; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; NEAR INFRARED RADIATION; RECOMBINATION; SEMICONDUCTOR LASERS; SIMULATION