Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow (Russian Federation)
We report the simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data. (lasers)
- OSTI ID:
- 22373586
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 44, Issue 2; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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