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Title: Direct observation and mechanism for enhanced field emission sites in platinum ion implanted/post-annealed ultrananocrystalline diamond films

Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films upon platinum (Pt) ion implantation and subsequent post-annealing processes is reported, viz., low turn-on field of 4.17 V/μm with high EFE current density of 5.08 mA/cm{sup 2} at an applied field of 7.0 V/μm. Current imaging tunneling spectroscopy (CITS) mode in scanning tunneling spectroscopy directly revealed the increased electron emission sites density for Pt ion implanted/post-annealed UNCD films than the pristine one. The high resolution CITS mapping and local current–voltage characteristic curves demonstrated that the electrons are dominantly emitted from the diamond grain boundaries and Pt nanoparticles.
Authors:
; ;  [1] ; ;  [2] ;  [3]
  1. Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871 (Japan)
  2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  3. Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)
Publication Date:
OSTI Identifier:
22350981
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CURRENT DENSITY; CURRENTS; DENSITY; DIAMONDS; ELECTRIC POTENTIAL; ELECTRON EMISSION; ELECTRONS; FIELD EMISSION; FILMS; GRAIN BOUNDARIES; ION IMPLANTATION; NANOPARTICLES; PHYSICAL RADIATION EFFECTS; PLATINUM IONS; RESOLUTION; SPECTROSCOPY; TUNNEL EFFECT