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Title: GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.
Authors:
 [1] ; ; ;  [2] ;  [3]
  1. PGMICRO, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil)
  2. Instituto de Física, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil)
  3. Instituto de Química, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil)
Publication Date:
OSTI Identifier:
22350847
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CONCENTRATION RATIO; CRYSTAL DEFECTS; DEUTERIUM; DEUTERIUM COMPOUNDS; DIELECTRIC MATERIALS; EVAPORATION; GERMANIUM; GERMANIUM OXIDES; LAYERS; MODIFICATIONS; OXYGEN; SILICON; SILICON OXIDES; STOICHIOMETRY; VACANCIES