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Title: High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ∼51 nm at a center wavelength of 1060 nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.
Authors:
; ; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)
  2. State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China)
  3. School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)
Publication Date:
OSTI Identifier:
22350838
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; A CENTERS; ASYMMETRY; COMPARATIVE EVALUATIONS; CONFINEMENT; CURRENTS; GALLIUM ARSENIDES; INDIUM ARSENIDES; LASER MATERIALS; LASERS; POWER DENSITY; PULSES; QUANTUM WELLS; SPECTRA; STIMULATED EMISSION; TUNNEL DIODES; TUNNEL EFFECT; WAVELENGTHS