High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

Journal Article · Mon Oct 06 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4897436· OSTI ID:22350838

Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing ^[1]; Chen, Weixi ^[2]; Ding, Ying ^[3]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)
2. State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China)
3. School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ∼51 nm at a center wavelength of 1060 nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

• OSTI ID: 22350838
• Journal Information: Applied Physics Letters, Vol. 105, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
A CENTERS
ASYMMETRY
COMPARATIVE EVALUATIONS
CONFINEMENT
CURRENTS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASER MATERIALS
LASERS
POWER DENSITY
PULSES
QUANTUM WELLS
SPECTRA
STIMULATED EMISSION
TUNNEL DIODES
TUNNEL EFFECT
WAVELENGTHS