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Title: Effect of oxygen plasma and thermal oxidation on shallow nitrogen-vacancy centers in diamond

We investigate the effect of two different surface treatments on shallow nitrogen-vacancy (NV) centers in diamond. Short duration oxygen plasma exposure is found to damage near-surface NV centers, resulting in their disappearance in fluorescence images. Subsequent annealing creates large numbers of new NV centers, attributed to plasma-induced vacancy creation. By tracking individual NV centers during thermal oxidation, we show that oxidation at 550 °C results in modest improvement of spin coherence. Higher temperature oxidations correlate with gradual decline in spin coherence and eventual instability of NV centers before ultimate disappearance. This is indicative of a reduction of the NV-to-surface distance due to oxidative etching. Thermal oxidation can offer controlled access to near-surface NV spins at the nanometer scale, an important requirement for many applications of NV-based nanomagnetometry.
Authors:
;  [1] ;  [2] ; ; ; ;  [1]
  1. IBM Research Division, Almaden Research Center, San Jose, California 95120 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22311205
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; DAMAGE; DIAMONDS; FLUORESCENCE; INSTABILITY; NITROGEN; OXIDATION; OXYGEN; PLASMA; REDUCTION; SPIN; SURFACE TREATMENTS; SURFACES; VACANCIES