skip to main content

Title: Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.
Authors:
 [1] ;  [1] ;  [2] ;  [2] ; ;  [3]
  1. Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)
  2. (China)
  3. Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)
Publication Date:
OSTI Identifier:
22311169
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; CARRIER MOBILITY; DIELECTRIC MATERIALS; GALLIUM OXIDES; INDIUM OXIDES; NANOCOMPOSITES; NANOPARTICLES; POLYETHYLENES; STABILITY; STRAINS; SUBSTRATES; THIN FILMS; TRANSISTORS; ZINC OXIDES