Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

Journal Article · Mon Jul 14 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4890312· OSTI ID:22311105

Gao, Xu; Aikawa, Shinya; Mitoma, Nobuhiko; Lin, Meng-Fang; Kizu, Takio; Tsukagoshi, Kazuhito ^[1]; Nabatame, Toshihide ^[2]

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1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)
2. MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)

Oxide thin film transistor employing copper source/drain electrodes shows a small turn on voltage and reduced hysteresis. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of ∼4 nm CuO{sub x} related interlayer. The lower bond-dissociation energy of Cu-O compared to Si-O and In-O suggests that the interlayer was formed by adsorbing oxygen molecules from surrounding environment instead of getting oxygen atoms from the semiconductor film. The formation of CuO{sub x} interlayer acting as an acceptor could suppress the carrier concentration in the transistor channel, which would be utilized to control the turn on voltage shifts in oxide thin film transistors.

• OSTI ID: 22311105
• Journal Information: Applied Physics Letters, Vol. 105, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
CARRIERS
COPPER
COPPER OXIDES
DISSOCIATION ENERGY
ELECTRODES
HYSTERESIS
MOLECULES
OXYGEN
RESOLUTION
SEMICONDUCTOR MATERIALS
THIN FILMS
TRANSISTORS
TRANSMISSION ELECTRON MICROSCOPY