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Title: Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 K

High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g{sup 2}(τ = 0) = 0.28 ± 0.20 can be tracked up to T = 200 K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device.
Authors:
; ;  [1] ; ; ;  [2]
  1. Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg (Germany)
  2. Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, 28334 Bremen (Germany)
Publication Date:
OSTI Identifier:
22311004
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; APERTURES; CADMIUM SELENIDES; ELECTROLUMINESCENCE; EPITAXY; EQUIPMENT; MAGNESIUM SULFIDES; PHOTONS; QUANTUM DOTS; SELENIUM COMPOUNDS; SULFUR COMPOUNDS; TEMPERATURE RANGE 0065-0273 K; ZINC COMPOUNDS