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Title: Charge tuning in [111] grown GaAs droplet quantum dots

We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from −3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T = 4 K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25 meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.
Authors:
; ; ; ; ;  [1] ; ; ; ;  [2] ; ; ;  [3]
  1. INSA-CNRS-UPS, LPCNO, Université de Toulouse, 135 Ave. Rangueil, 31077 Toulouse (France)
  2. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
  3. Ioffe Physical-Technical Institute RAS, 194021 St.-Petersburg (Russian Federation)
Publication Date:
OSTI Identifier:
22310953
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; AMPLITUDES; DROPLETS; ELECTRIC POTENTIAL; ENERGY-LEVEL TRANSITIONS; EPITAXY; EXCITONS; FINE STRUCTURE; GALLIUM ARSENIDES; GROUND STATES; MAGNETIC FIELDS; MEV RANGE; PHOTOLUMINESCENCE; QUANTUM DOTS; SHELLS; STRAINS; SUBSTRATES; TEMPERATURE RANGE 0000-0013 K; TUNING; VALENCE