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Title: Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn{sub 4}N epitaxial thin film

We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.
Authors:
;  [1] ; ;  [1] ;  [2] ; ;  [1] ;  [2] ;  [3]
  1. Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan)
  2. (JST), Tokyo 113-0033 (Japan)
  3. (KAST), Kawasaki 213-0012 (Japan)
Publication Date:
OSTI Identifier:
22310893
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; ELECTRIC CONDUCTIVITY; ENERGY BEAM DEPOSITION; FERRIMAGNETIC MATERIALS; HALL EFFECT; LASER RADIATION; LATTICE PARAMETERS; MAGNESIUM OXIDES; MANGANESE NITRIDES; MOLECULAR BEAM EPITAXY; PULSED IRRADIATION; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS