Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn{sub 4}N epitaxial thin film

Journal Article · Mon Aug 18 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4893732· OSTI ID:22310893

Shen, Xi; Shigematsu, Kei ^[1]; Chikamatsu, Akira; Fukumura, Tomoteru ^[1]; Hirose, Yasushi; Hasegawa, Tetsuya ^[1]

---

1. Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan)

We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

• OSTI ID: 22310893
• Journal Information: Applied Physics Letters, Vol. 105, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
FERRIMAGNETIC MATERIALS
HALL EFFECT
LASER RADIATION
LATTICE PARAMETERS
MAGNESIUM OXIDES
MANGANESE NITRIDES
MOLECULAR BEAM EPITAXY
PULSED IRRADIATION
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS