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Title: Decoupled scenario between the conductive carriers and the ferromagnetism in epitaxial Zn{sub 0.85−x}Mg{sub x}Co{sub 0.15}O thin films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4893563· OSTI ID:22310889
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  1. National Key Laboratory of Crystal Materials, School of Physics, Shandong University, Jinan, Shandong 250100 (China)

A series of Zn{sub 0.85−x}Mg{sub x}Co{sub 0.15}O (0 ≤ x ≤ 0.3) thin films were fabricated by plasma-assisted molecular-beam epitaxy to investigate the correlation between the electrical transport properties and the ferromagnetism. It is observed that the saturation magnetization remains almost unchanged even though the resistivity of the Zn{sub 0.85−x}Mg{sub x}Co{sub 0.15}O films dramatically increases more than 6 orders with increasing Mg concentration. Moreover, the absence of detectable anomalous Hall effects and very small magnetoresistance in the films reveal the absence of spin polarization of conductive carriers and very weak spin-dependent scattering or tunneling processes. All these results suggest that the conductive carriers are decoupled with the ferromagnetism in the Zn{sub 0.85−x}Mg{sub x}Co{sub 0.15}O films.

OSTI ID:
22310889
Journal Information:
Applied Physics Letters, Vol. 105, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English