skip to main content

Title: Epitaxial growth of large area single-crystalline few-layer MoS{sub 2} with high space charge mobility of 192 cm{sup 2} V{sup −1} s{sup −1}

We report on the vapor-solid growth of single crystalline few-layer MoS{sub 2} films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated that the films had good out-of-plane ordering and epitaxial registry. A carrier density of ∼2 × 10{sup 11 }cm{sup −2} and a room temperature mobility of 192 cm{sup 2}/Vs were extracted from space-charge limited transport regime in the films. The electron mobility was found to exhibit in-plane anisotropy with a ratio of ∼1.8. Theoretical estimates of the temperature-dependent electron mobility including optical phonon, acoustic deformation potential, and remote ionized impurity scattering were found to satisfactorily match the measured data. The synthesis approach reported here demonstrates the feasibility of device quality few-layer MoS{sub 2} films with excellent uniformity and high quality.
Authors:
; ;  [1] ; ; ; ; ;  [2]
  1. Department of Chemistry and Biochemistry, The Ohio State University, 100 West 18th Avenue, Columbus, Ohio 43210 (United States)
  2. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
Publication Date:
OSTI Identifier:
22310884
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; CARRIER DENSITY; CRYSTAL GROWTH; DEFORMATION; ELECTRICAL PROPERTIES; ELECTRON MOBILITY; EPITAXY; FILMS; IMPURITIES; LAYERS; MOLYBDENUM SULFIDES; MONOCRYSTALS; RESOLUTION; SAPPHIRE; SOLIDS; SPACE CHARGE; SYNTHESIS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION