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Title: Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap

Strain-based band engineering in quantum dots and dashes has been predominantly limited to compressively strained systems. However, tensile strain strongly reduces the bandgaps of nanostructures, enabling nanostructures to emit light at lower energies than they could under compressive strain. We demonstrate the self-assembled growth of dislocation-free GaAs quantum dashes on an InP(111)B substrate, using a 3.8% tensile lattice-mismatch. Due to the high tensile strain, the GaAs quantum dashes luminesce at 110–240 meV below the bandgap of bulk GaAs. The emission energy is readily tuned by adjusting the size of the quantum dashes via deposition thickness. Tensile self-assembly creates new opportunities for engineering the band alignment, band structure, and optical properties of epitaxial nanostructures.
Authors:
; ;  [1] ; ;  [2] ; ; ; ;  [3] ;  [2] ;  [4]
  1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
  2. California NanoSystems Institute, University of California, Los Angeles, California 90095 (United States)
  3. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22310879
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; DISLOCATIONS; EPITAXY; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; LUMINESCENCE; OPTICAL PROPERTIES; QUANTUM DOTS; STRAINS; SUBSTRATES; THICKNESS; VISIBLE RADIATION