Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

Journal Article · Mon Oct 27 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4900960· OSTI ID:22310676

Kuang, Y. J. ^[1]; Takabayashi, K.; Kamiya, I. ^[2]; Sukrittanon, S. ^[3]; Pan, J. L.; Tu, C. W. ^[4]

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1. Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)
2. Quantum Interface Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)
3. Material Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States)
4. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

Self-assembled dilute nitride InNP quantum dots (QDs) in GaP matrix grown under the Stranski-Krastanov mode by gas-source molecular beam epitaxy are studied. The N-related localized states inside the InNP QDs provide a spatially direct recombination channel, in contrast to the spatially indirect channel through the strained In(N)P QDs/GaP interface states. The N incorporation into InP QDs therefore causes a blueshift and double-peak features in photoluminescence, which are not observed in other dilute nitride materials.

• OSTI ID: 22310676
• Journal Information: Applied Physics Letters, Vol. 105, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
INTERFACES
MATRIX MATERIALS
MOLECULAR BEAM EPITAXY
NITROGEN COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM DOTS
RECOMBINATION
STRAINS