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Title: Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

Self-assembled dilute nitride InNP quantum dots (QDs) in GaP matrix grown under the Stranski-Krastanov mode by gas-source molecular beam epitaxy are studied. The N-related localized states inside the InNP QDs provide a spatially direct recombination channel, in contrast to the spatially indirect channel through the strained In(N)P QDs/GaP interface states. The N incorporation into InP QDs therefore causes a blueshift and double-peak features in photoluminescence, which are not observed in other dilute nitride materials.
Authors:
 [1] ; ;  [2] ;  [3] ; ;  [4]
  1. Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)
  2. Quantum Interface Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)
  3. Material Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States)
  4. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
Publication Date:
OSTI Identifier:
22310676
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; INTERFACES; MATRIX MATERIALS; MOLECULAR BEAM EPITAXY; NITROGEN COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM DOTS; RECOMBINATION; STRAINS