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Title: Optical density of states in ultradilute GaAsN alloy: Coexistence of free excitons and impurity band of localized and delocalized states

Optically active states in liquid phase epitaxy-grown ultra-dilute GaAsN are studied. The feature-rich low temperature photoluminescence spectrum has contributions from excitonic band states of the GaAsN alloy, and two types of defect states—localized and extended. The degree of delocalization for extended states both within the conduction and defect bands, characterized by the electron temperature, is found to be similar. The degree of localization in the defect band is analyzed by the strength of the phonon replicas. Stronger emission from these localized states is attributed to their giant oscillator strength.
Authors:
; ;  [1] ; ;  [2]
  1. Indian Institute of Science Education and Research Kolkata, Mohanpur Campus, Nadia 741252, West Bengal (India)
  2. Department of Electronic Science, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India)
Publication Date:
OSTI Identifier:
22308706
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARSENIC COMPOUNDS; CRYSTAL DEFECTS; ELECTRON TEMPERATURE; ELECTRONIC STRUCTURE; EXCITONS; GALLIUM COMPOUNDS; IMPURITIES; LIQUID PHASE EPITAXY; NITROGEN COMPOUNDS; OPACITY; OSCILLATOR STRENGTHS; PHONONS; PHOTOLUMINESCENCE; SPECTRA; TERNARY ALLOY SYSTEMS