Carrier transport properties of nanocrystalline Er{sub 3}N@C{sub 80}

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4887796· OSTI ID:22308493

Sun, Yong; Maeda, Yuki; Sezaimaru, Hiroki; Sakaino, Masamichi ^[1]; Kirimoto, Kenta ^[2]

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1. Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550 (Japan)
2. Department of Electrical and Electronic Engineering, Kitakyushu National College of Technology, 5-20-1 shii, Kokuraminami, Kitakyushu, Fukuoka 802-0985 (Japan)

Electrical transport properties of the nanocrystalline Er{sub 3}N@C{sub 80} with fcc crystal structure were characterized by measuring both temperature-dependent d.c. conductance and a.c. impedance. The results showed that the Er{sub 3}N@C{sub 80} sample has characteristics of n-type semiconductor and an electron affinity larger than work function of gold metal. The Er{sub 3}N@C{sub 80}/Au interface has an ohmic contact behavior and the contact resistance was very small as compared with bulk resistance of the Er{sub 3}N@C{sub 80} sample. The charge carriers in the sample were thermally excited from various trapped levels and both acoustic phonon and ionic scatterings become a dominant process in different temperature regions, respectively. At temperatures below 250 K, the activation energy of the trapped carrier was estimated to be 35.5 meV, and the ionic scattering was a dominant mechanism. On the other hand, at temperatures above 350 K, the activation energy was reduced to 15.9 meV, and the acoustic phonon scattering was a dominant mechanism. In addition, a polarization effect from the charge carrier was observed at low frequencies below 2.0 MHz, and the relative intrinsic permittivity of the Er{sub 3}N@C{sub 80} nanocrystalline lattice was estimated to be 4.6 at frequency of 5.0 MHz.

• OSTI ID: 22308493
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 3; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
CARBON
CHARGE CARRIERS
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRIC IMPEDANCE
ERBIUM COMPOUNDS
FCC LATTICES
NANOMATERIALS
NANOSTRUCTURES
NITROGEN COMPOUNDS
N-TYPE CONDUCTORS
PERMITTIVITY
POLARIZATION
SCATTERING
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TRAPPING
WORK FUNCTIONS