Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance
Journal Article
·
· AIP Conference Proceedings
- Ioffe Institute of the Russian Academy of Sciences, St. Petersburg (Russian Federation)
A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.
- OSTI ID:
- 22308253
- Journal Information:
- AIP Conference Proceedings, Vol. 1610, Issue 1; Conference: TIDS15: 15. international conference on transport in interacting disordered systems, Sant Feliu de Guixols (Spain), 1-5 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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