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Title: Conduction in alumina with atomic scale copper filaments

The conductance of atomic scale filaments with three and seven Cu atoms in α-alumina are calculated using ab initio density functional theory. We find that the filament with 3 Cu atoms is sufficient to increase the conductance of 1.3 nm thick alumina film by more than 10{sup 3} times in linear response. As the applied voltage increases, the current quickly saturates and differential resistance becomes negative. Compared to the filament with three Cu atoms, while the conductance of the filament with seven Cu atoms is comparable in linear response, they carry as much as twenty times larger current at large biases. The electron transport is analyzed based on local density of states, and the negative differential resistance in the seven Cu filaments occurs due to their narrow bandwidth.
Authors:
; ;  [1]
  1. Department of Electrical Engineering, University of Washington, Seattle, Washington 98195 (United States)
Publication Date:
OSTI Identifier:
22308151
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; ATOMS; COPPER; CURRENTS; DENSITY FUNCTIONAL METHOD; ELECTRIC CONDUCTIVITY; FILAMENTS; FILMS; NANOSTRUCTURES