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Title: Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.
Authors:
; ;  [1] ; ; ; ;  [2] ;  [1] ;  [3]
  1. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22306242
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DAMAGE; EFFICIENCY; ELECTROLUMINESCENCE; EQUIPMENT; ETCHING; GAIN; GALLIUM NITRIDES; INDIUM COMPOUNDS; LEAKAGE CURRENT; LIGHT EMITTING DIODES; PASSIVATION; PHOTOLUMINESCENCE; POTASSIUM HYDROXIDES; RECOMBINATION; TRANSMISSION ELECTRON MICROSCOPY