Tailoring room temperature photoluminescence of antireflective silicon nanofacets
- Department of Physics, School of Natural Sciences, Shiv Nadar University, Gautam Budh Nagar, Uttar Pradesh 201 314 (India)
- National Institute of Science Education and Research, Bhubaneswar 751 005 (India)
In this paper, a fluence-dependent antireflection performance is presented from ion-beam fabricated nanofaceted-Si surfaces. It is also demonstrated that these nanofacets are capable of producing room temperature ultra-violet and blue photoluminescence which can be attributed to inter-band transitions of the localized excitonic states of different Si-O bonds at the Si/SiO{sub x} interface. Time-resolved photoluminescence measurements further confirm defect-induced radiative emission from the surface of silicon nanofacets. It is observed that the spectral characteristics remain unchanged, except an enhancement in the photoluminescence intensity with increasing ion-fluence. The increase in photoluminescence intensity by orders of magnitude stronger than that of a planar Si substrate is due to higher absorption of incident photons by nanofaceted structures.
- OSTI ID:
- 22306016
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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