skip to main content

Title: Tailoring room temperature photoluminescence of antireflective silicon nanofacets

In this paper, a fluence-dependent antireflection performance is presented from ion-beam fabricated nanofaceted-Si surfaces. It is also demonstrated that these nanofacets are capable of producing room temperature ultra-violet and blue photoluminescence which can be attributed to inter-band transitions of the localized excitonic states of different Si-O bonds at the Si/SiO{sub x} interface. Time-resolved photoluminescence measurements further confirm defect-induced radiative emission from the surface of silicon nanofacets. It is observed that the spectral characteristics remain unchanged, except an enhancement in the photoluminescence intensity with increasing ion-fluence. The increase in photoluminescence intensity by orders of magnitude stronger than that of a planar Si substrate is due to higher absorption of incident photons by nanofaceted structures.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Institute of Physics, Schivalaya Marg. Bhubaneswar 751 005 (India)
  2. Department of Physics, School of Natural Sciences, Shiv Nadar University, Gautam Budh Nagar, Uttar Pradesh 201 314 (India)
  3. National Institute of Science Education and Research, Bhubaneswar 751 005 (India)
Publication Date:
OSTI Identifier:
22306016
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CHEMICAL BONDS; CRYSTAL DEFECTS; INTERFACES; ION BEAMS; IONS; PHOTOLUMINESCENCE; PHOTONS; SILICON; SILICON OXIDES; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; TIME RESOLUTION