Luminescence and superradiance in electron-beam-excited Al{sub x}Ga{1-sub x}N

Journal Article · Sun Sep 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4894774· OSTI ID:22305981

Bokhan, P. A.; Gugin, P. P.; Zakrevsky, Dm. E.; Malin, T. V. ^[1]; Zhuravlev, K. S.; Osinnykh, I. V. ^[1]; Solomonov, V. I.; Spirina, A. V. ^[2]

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1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13, Lavrentieva av., Novosibirsk 630090 (Russian Federation)
2. Institute of Electrophysics, Ural Division of the Russian Academy of Sciences, 106, Amundsen str., Ekaterinburg 620016 (Russian Federation)

Luminescence and superradiance characteristics of 0.5–1.2-μm thick Al{sub x}Ga{sub 1-x}N films grown by molecular-beam epitaxy on sapphire substrates were studied under excitation of the films with low-energy (<20 keV) and high-energy (170 keV) electron beams. In both cases, the luminescence spectra looked quite similarly; they exhibited a band-edge luminescence with x-dependent wavelength ranging from 365 nm to 310 nm and a broadband emission taking over the whole visible spectral region. Superradiance within the broad band was obtained by pumping the samples with powerful an electron beam in the form of an open-discharge-generated filament.

• OSTI ID: 22305981
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ELECTRON BEAMS
EXCITATION
FILAMENTS
FILMS
GALLIUM NITRIDES
KEV RANGE
LUMINESCENCE
MOLECULAR BEAM EPITAXY
PUMPING
SAPPHIRE
SPECTRA
SUBSTRATES
SUPERRADIANCE
WAVELENGTHS