Physical properties of Al{sub x}In{sub 1–x}N thin film alloys sputtered at low temperature
- National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele, Ilfov (Romania)
- Horia Hulubei National Institute of Physics and Nuclear Engineering, 30 Reactorului Street, 077125 Magurele, Ilfov (Romania)
- Honeywell Romania S.R.L., Sensors and Wireless Laboratory Bucharest, 3 George Constantinescu Street, 020339 Bucharest (Romania)
In this paper, we report on the structural, optical, and electrical properties of a wide compositional range of Al{sub x}In{sub 1–x}N thin layers deposited on glass and polyethylene terephthalate substrates. Al{sub x}In{sub 1–x}N layers of controlled composition were obtained by a simple reactive magnetron co-sputtering protocol, using a single aluminium target with indium insets, by varying the Al/In target surface area ratio, and the composition of the deposition atmosphere. The relevant physical properties were investigated and discussed. It is shown that the texture of the thin films is dependent on the cation ratio, while the bowing parameters of lattice constants and band gap values are larger than those of epitaxial layers.
- OSTI ID:
- 22305819
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
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