skip to main content

SciTech ConnectSciTech Connect

Title: Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.
Authors:
; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan)
  2. (Japan)
  3. NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)
Publication Date:
OSTI Identifier:
22304464
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ANNEALING; DENSITY; EV RANGE; GALLIUM ANTIMONIDES; INTERFACES; METALS; MOS TRANSISTORS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TEMPERATURE RANGE 0400-1000 K; TRAPS