Electron-phonon coupling enhanced by the FeSe/SrTiO{sub 3} interface
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093 (China)
- Departement of Physics, Nanjing Normal University, Nanjing 210023 (China)
The electronic structure, phonon dispersions, and electron-phonon (EP) coupling in Fe{sub 2}Se{sub 2}/SrTiO{sub 3} (FeSe/STO) thinnest films are studied based on the first-principles calculations. It is found that the FeSe/STO interface with lattice strain leads to a change of band structures and a significant enhancement of the EP coupling, the latter being close related to interface-induced ferroelectric phonons coupled to electrons on the FeSe monolayer. In the FeSe/STO system, T{sub c} of phonon-induced superconductivity is estimated to be much greater than that in the bulk FeSe, but still well below the experimental value of an FeSe monolayer on the STO substrate, indicating that the electron-phonon mechanism alone cannot explain its high T{sub c}.
- OSTI ID:
- 22304416
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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