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Title: Carrier redistribution between different potential sites in semipolar (202{sup ¯}1) InGaN quantum wells studied by near-field photoluminescence

Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202{sup ¯}1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202{sup ¯}1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.
Authors:
 [1] ;  [1] ;  [2] ; ; ; ;  [3]
  1. Department of Materials and Nano Physics, KTH Royal Institute of Technology, Electrum 229, 16440 Kista (Sweden)
  2. (Lithuania)
  3. Materials Department, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22303486
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER DENSITY; CARRIERS; DIFFUSION; EXCITATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NITROGEN COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; RECOMBINATION; SPECTROSCOPY