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Title: Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon

As-grown InGaAs nanoneedle lasers, synthesized at complementary metal–oxide–semiconductor compatible temperatures on polycrystalline and crystalline silicon substrates, were studied in photoluminescence experiments. Radiation patterns of three-dimensional whispering gallery modes were observed upon optically pumping the needles above the lasing threshold. Using the radiation patterns as well as finite-difference-time-domain simulations and polarization measurements, all modal numbers of the three-dimensional whispering gallery modes could be identified.
Authors:
; ; ; ; ;  [1]
  1. Applied Science and Technology Group and Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22303483
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LANTHANUM SELENIDES; LASERS; METALS; OXIDES; PHOTOLUMINESCENCE; POLARIZATION; POLYCRYSTALS; PUMPING; SEMICONDUCTOR MATERIALS; SILICON; SIMULATION; SUBSTRATES; THREE-DIMENSIONAL CALCULATIONS