High-voltage field effect transistors with wide-bandgap β-Ga{sub 2}O{sub 3} nanomembranes
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
- Materials Department, University of California Santa Barbara, California 93106 (United States)
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
- Leibniz Institute for Crystal Growth, Max-Born Str., D-12489 Berlin (Germany)
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.
- OSTI ID:
- 22300133
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Wide-Bandgap Semiconductors
Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes