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Title: The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots

The authors report on the impact of wetting layer thickness and quantum dot size on the electronic and optical properties of dome-shaped InAs/GaAs quantum dots (QDs) with strained potential. Two wetting layer thicknesses of 0.5 and 2.0 nm were compared. A strong size dependence of P-to-S transition energy, transition dipole moment, oscillator strength, and linear and third-order nonlinear susceptibilities were concluded. The P-to-S transition dipole moment was shown to be purely in-plane polarization. The linear and nonlinear absorption and dispersion showed a red shift when the wetting layer thickness was increased. Our results revealed that the nonlinear susceptibility is much more sensitive to QD size compared to the linear susceptibility. An interpretation of the results was presented based on the probability density of finding the electron inside the dot and wetting layer. The results are in good agreement with previously reported experimental data.
Authors:
;  [1]
  1. Physics Department, Faculty of Science, Shahid Chamran University of Ahvaz (Iran, Islamic Republic of)
Publication Date:
OSTI Identifier:
22300067
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 6; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; DENSITY; DIPOLE MOMENTS; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; OPTICAL PROPERTIES; OSCILLATOR STRENGTHS; POLARIZATION; PROBABILITY; QUANTUM DOTS; THICKNESS