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Title: First-principles investigation of the vacancy effect on the electronic properties in M{sub 2}AlC(M = V and Nb)

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4900414· OSTI ID:22299629
;  [1];  [2]
  1. College of Mathematics and Statistics, Long Dong University, QingYang 745000 (China)
  2. Institute of Modern physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

First principles calculations have been performed to study the mono-vacancy formation energies and electronic properties of M{sub 2}AlC (M = V and Nb) compound. The results show that the M mono-vacancy has a maximum formation energy. While the C mono-vacancy has a minimum formation energy, which means that the C mono-vacancy is the energetically most favorable in M{sub 2}AlC. The d-electrons of M element contribute most to the DOS of M{sub 2}AlC around the Fermi level, it implies that the conductivity of M{sub 2}AlC comes from the transition metal M. The M-C bond is stronger than the M-Al bond, which is caused by the strong hybridization energy peak between M and C atom. In addition, the M-C bond is weaken in the presence of the M or C mono-vacancy. The cell volumes are reduced when the mono-vacancy is formed. These results help us to understand the origin of the defect-related properties and phase stability of V{sub 2}AlC and Nb{sub 2}AlC under extreme environment.

OSTI ID:
22299629
Journal Information:
AIP Advances, Vol. 4, Issue 10; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
Country of Publication:
United States
Language:
English