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Title: Triangular-barrier quantum rod photodiodes: Their fabrication and detector characteristics

We have fabricated a GaAs-based triangular-barrier photodiode, in which self-assembled InGaAs quantum rods (Q-rods) are embedded in its barrier region. Transport study at 100 K has shown that electrons start to flow mainly through Q-rods when a bias is set above a threshold. Upon illumination, photo-generated holes are found to accumulate in the middle portion of Q-rods and efficiently lower the local barrier height, yielding the responsivity as high as 10{sup 5} A/W at the incident light of 1 fW.
Authors:
; ; ; ; ;  [1]
  1. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-0034 (Japan)
Publication Date:
OSTI Identifier:
22293042
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRONS; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; NANOSTRUCTURES; PHOTODIODES; VISIBLE RADIATION