Preparation of W–Sc{sub 2}O{sub 3} targets and scandate cathodes with film prepared by pulsed laser deposition
Graphical abstract: - Highlights: • W–Sc{sub 2}O{sub 3} film containing 5% Sc{sub 2}O{sub 3} and 95% W were prepared by pulsed laser deposition. • W–Sc{sub 2}O{sub 3} film on scandate cathode surface improves emission property. • The film improves Sc distribution uniformity and is favorable for forming Ba–Sc–O layer. - Abstract: Sub-micrometer Sc{sub 2}O{sub 3}–W powder with a narrow particle size distribution has been obtained by a sol–gel method combined with two-step hydrogen reduction process. Based on the obtained powder, the W–Sc{sub 2}O{sub 3} targets have been sintered via spark plasma sintering (SPS) at 1300 °C. The W–Sc{sub 2}O{sub 3} targets have the average grain size of about 1 μm. Both the sintering temperature and holding time are much lower than those of the targets prepared with micrometer sized powders. The obtained W–Sc{sub 2}O{sub 3} targets have a high comparative density of 96.4% and rockwell hardness of 86.4 HRC. Using the target, the scandate cathode deposited with a film containing 5% Sc{sub 2}O{sub 3} and 95% W has been obtained by pulsed laser deposition (PLD) method. This cathode has good emission property, i.e., the highest thermionic emission current density reaches 43.09 A/cm{sup 2} of J{sub div} at 900 °C{sub b} after being activated for 8 h, which is much higher than that of scandate cathode without film. Scandium (Sc) supplied by the film on the surface during the activation forms a Ba–Sc–O active layer, which helps to the emission.
- OSTI ID:
- 22290355
- Journal Information:
- Materials Research Bulletin, Vol. 48, Issue 12; Conference: ISFM 2012: 5. international symposium on functional materials, Perth, WA (Australia), 17-20 Dec 2012; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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